2N4919G Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4919G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO-225
2N4919G Transistor Equivalent Substitute - Cross-Reference Search
2N4919G Datasheet (PDF)
2n4919g.pdf
2N4918 - 2N4920* SeriesPreferred Device Medium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Pb-Free Package is Available**3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis
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Order this documentMOTOROLAby 2N4918/DSEMICONDUCTOR TECHNICAL DATA2N4918Medium-Power Plastic PNPthruSilicon Transistors*2N4920. . . designed for driver circuits, switching, and amplifier applications. Thesehighperformance plastic devices feature:*Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp3 AMPERE Excellent
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2n4918 2n4919 2n4920.pdf
ON Semiconductor)2N4918Medium-Power Plastic PNPthruSilicon Transistors*2N4920. . . designed for driver circuits, switching, and amplifier*ON Semiconductor Preferred Deviceapplications. These highperformance plastic devices feature:3 AMPERE Low Saturation Voltage GENERALPURPOSEVCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 AmpPOWER TRANSISTORS4080 VOLTS Exc
2n4918 2n4919 2n4920 2n4920g.pdf
2N4918 - 2N4920 SeriesMedium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation, PD = 30 W @ TC = 25_C3.0 A, 40-80 V, 30 W Excellent Safe Oper
2n4918 2n4919 2n4920.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921,2N4922 2N4923 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to
2n4918 2n4919 2n4920.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921/4922/4923 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
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