2N5001SMD Specs and Replacement
Type Designator: 2N5001SMD
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 2 A
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO-276AB
2N5001SMD Substitution
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2N5001SMD datasheet
2N5001SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 80V IC = 2A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0... See More ⇒
Data Sheet No. 2N5005 Generic Part Number Type 2N5005 2N5005 Geometry 9702 Polarity PNP REF MIL-PRF-19500/512 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed power switching appli- cations. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/512 wh... See More ⇒
Data Sheet No. 2N5003 Generic Part Number Type 2N5003 2N5003 Geometry 9702 Polarity PNP REF MIL-PRF-19500/512 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed power switching appli- cations. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are TO-59 per MIL-PRF-19500... See More ⇒
Detailed specifications: 2N4919G, 2N4920G, 2N4921G, 2N4922G, 2N4923G, 2N4928CSM, 2N4928DCSM, 2N4939DCSM, 13005, 2N5010S, 2N5011S, 2N5012S, 2N5013S, 2N5014S, 2N5015SX, 2N5015X, 2N5038G
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