2N5001SMD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5001SMD  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-emisor (Vce): 80 V

Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO-276AB

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2N5001SMD datasheet

 ..1. Size:10K  semelab
2n5001smd.pdf pdf_icon

2N5001SMD

2N5001SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 80V IC = 2A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

 8.1. Size:98K  ssdi
2n4999 2n5001.pdf pdf_icon

2N5001SMD

 9.1. Size:153K  semicoa
2n5005.pdf pdf_icon

2N5001SMD

Data Sheet No. 2N5005 Generic Part Number Type 2N5005 2N5005 Geometry 9702 Polarity PNP REF MIL-PRF-19500/512 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed power switching appli- cations. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/512 wh

 9.2. Size:152K  semicoa
2n5003.pdf pdf_icon

2N5001SMD

Data Sheet No. 2N5003 Generic Part Number Type 2N5003 2N5003 Geometry 9702 Polarity PNP REF MIL-PRF-19500/512 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed power switching appli- cations. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are TO-59 per MIL-PRF-19500

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