2N5001SMD Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5001SMD
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 2 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60 MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO-276AB
Búsqueda de reemplazo de 2N5001SMD
Principales características: 2N5001SMD
2n5001smd.pdf
2N5001SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 80V IC = 2A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0
2n5005.pdf
Data Sheet No. 2N5005 Generic Part Number Type 2N5005 2N5005 Geometry 9702 Polarity PNP REF MIL-PRF-19500/512 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed power switching appli- cations. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/512 wh
2n5003.pdf
Data Sheet No. 2N5003 Generic Part Number Type 2N5003 2N5003 Geometry 9702 Polarity PNP REF MIL-PRF-19500/512 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed power switching appli- cations. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are TO-59 per MIL-PRF-19500
Otros transistores... 2N4919G , 2N4920G , 2N4921G , 2N4922G , 2N4923G , 2N4928CSM , 2N4928DCSM , 2N4939DCSM , 13005 , 2N5010S , 2N5011S , 2N5012S , 2N5013S , 2N5014S , 2N5015SX , 2N5015X , 2N5038G .
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