2N5195G Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5195G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO-225AA
2N5195G Transistor Equivalent Substitute - Cross-Reference Search
2N5195G Datasheet (PDF)
2n5194g 2n5195g.pdf
2N5194G, 2N5195GSilicon PNP PowerTransistorsThese devices are designed for use in power amplifier and switchingcircuits; excellent safe area limits.Featureshttp://onsemi.com Complement to NPN 2N5191, 2N51924 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS (Note 1)PNP SILICONRating Symbol Value Unit60 - 80 VOLTSCollecto
2n5195g.pdf
2N5194, 2N5195Preferred DevicesSilicon PNP PowerTransistorsThese devices are designed for use in power amplifier and switchingcircuits; excellent safe area limits. Complement to NPN 2N5191,2N5192.http://onsemi.comFeatures Pb-Free Packages are Available* 4 AMPEREPOWER TRANSISTORSMAXIMUM RATINGS (Note 1)PNP SILICON
2n5194 2n5195.pdf
Order this documentMOTOROLAby 2N5194/DSEMICONDUCTOR TECHNICAL DATA2N51942N5195*Silicon PNP Power Transistors*Motorola Preferred Device. . . for use in power amplifier and switching circuits, excellent safe area limits.Complement to NPN 2N5191, 2N51924 AMPEREPOWER TRANSISTORS
2n5195.pdf
2N5195Low voltage PNP power transistorFeatures Low saturation voltage PNP transistorApplication Audio, power linear and switching equipment12Description3SOT-32The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The Figure 1.
2n5194 2n5195.pdf
2N5194, 2N5195Preferred DevicesSilicon PNP PowerTransistorsThese devices are designed for use in power amplifier and switchingcircuits; excellent safe area limits. Complement to NPN 2N5191,2N5192.http://onsemi.comFeatures Pb-Free Packages are Available* 4 AMPEREPOWER TRANSISTORSMAXIMUM RATINGS (Note 1)PNP SILICON
2n5193 2n5194 2n5195.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION With TO-126 package Complement to type 2N5190,2N5191,2N5192 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum
2n5193 2n5194 2n5195.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION With TO-126 package Complement to type 2N5190/5191/5192 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute max
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BUX80-6
