2N5430X Datasheet and Replacement

2N5430XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 100V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5430 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE

2N5432/5433/5434Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)2N5432 4 to 10 5 10 2.52N5433 3 to 9 7 10 2.52N5434 1 to 4 10 10 2.5FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2N5432