2N5430X Datasheet and Replacement
Type Designator: 2N5430X
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 7 A
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-213AA
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2N5430X Datasheet (PDF)
2n5430x.pdf

2N5430XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 100V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec
2n5430.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5430 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE
2n5432 2n5433 2n5434.pdf

2N5432/5433/5434Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)2N5432 4 to 10 5 10 2.52N5433 3 to 9 7 10 2.52N5434 1 to 4 10 10 2.5FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2N5432
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: MP8533 | 2SC1353 | DTD114E | UNR221L | ZX5T853G | CFD811 | CMLT4413
Keywords - 2N5430X transistor datasheet
2N5430X cross reference
2N5430X equivalent finder
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History: MP8533 | 2SC1353 | DTD114E | UNR221L | ZX5T853G | CFD811 | CMLT4413



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