2N5661U3 Datasheet. Specs and Replacement

Type Designator: 2N5661U3  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: U3

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2N5661U3 datasheet

 ..1. Size:275K  microsemi

 2n5661u3.pdf pdf_icon

2N5661U3

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 DEVICES LEVELS 2N5660 2N5661 2N5662 JAN 2N5660U3 2N5661U3 2N5663 JANTX JANT... See More ⇒

 8.1. Size:59K  microsemi

 2n5660 2n5661 2n5662 2n5663.pdf pdf_icon

2N5661U3

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices Qualified Level JAN, JANTX 2N5660 2N5661 2N5662 2N5663 JANTXV MAXIMUM RATINGS 2N5660 2N5661 Ratings Symbol Unit 2N5662 2N5663 Collector-Emitter Voltage 200 300 Vdc VCEO Collector-Base Voltage 250 400 Vdc VCBO Collector-Emitter Voltage 250 400 Vdc VCER Emitter-Base Voltage 6.0 ... See More ⇒

 8.2. Size:127K  inchange semiconductor

 2n5660 2n5661.pdf pdf_icon

2N5661U3

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5660 2N5661 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Em... See More ⇒

 8.3. Size:221K  inchange semiconductor

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2N5661U3

isc Silicon NPN Power Transistor 2N5661 DESCRIPTION Collector-Emitter Breakdown Voltage- V =300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 30... See More ⇒

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Detailed specifications: 2N5551G, 2N5551HR, 2N5551K, 2N5551N, 2N5551SC, 2N5655G, 2N5657G, 2N5660U3, 2SA1837, 2N5664SMD, 2N5664SMD05, 2N5665N1, 2N5665SMD, 2N5666S, 2N5666SMD, 2N5666SMD05, 2N5666U3

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