All Transistors. 2N5782L Datasheet

 

2N5782L Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5782L

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Emitter Voltage |Vce|: 65 V

Maximum Collector Current |Ic max|: 3.5 A

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

2N5782L Transistor Equivalent Substitute - Cross-Reference Search

 

2N5782L Datasheet (PDF)

0.1. 2n5782l.pdf Size:10K _semelab

2N5782L

2N5782LDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar PNP Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar PNP Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 65V 5.08 (0.200)IC = 3.5A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 can

9.1. 2n373 2n374 2n456 2n457 2n497 2n544 2n561 2n578 2n579 2n580.pdf Size:317K _rca

2N5782L

9.2. 2n5780 2n5780 2n5777.pdf Size:57K _njs

2N5782L

 9.3. 2n5783 2n5786.pdf Size:89K _central

2N5782L
2N5782L

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.4. 2n5784smd.pdf Size:10K _semelab

2N5782L

2N5784SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3.5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

 9.5. 2n5781xl.pdf Size:10K _semelab

2N5782L

2N5781XLDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar PNP Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar PNP Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 80V 5.08 (0.200)IC = 3.5A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 ca

9.6. 2n5785smd05.pdf Size:10K _semelab

2N5782L

2N5785SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 65V IC = 3.5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab he

9.7. 2n5785smd.pdf Size:10K _semelab

2N5782L

2N5785SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 65V IC = 3.5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

9.8. 2n5784.pdf Size:18K _semelab

2N5782L
2N5782L

2N5784MECHANICAL DATADimensions in mm (inches)8.89 (0.35)9.40 (0.37)7.75 (0.305)SILICON EPITAXIAL8.51 (0.335)NPN TRANSISTOR4.19 (0.165)4.95 (0.195)0.89max.FEATURES(0.035)12.70(0.500)7.75 (0.305)min.General purpose power transistor for8.51 (0.335)dia.switching and linear applications in ahermetic TO39 package.5.08 (0.200)typ.2.542(0.100)

9.9. 2n5784smd05.pdf Size:10K _semelab

2N5782L

2N5784SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3.5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab he

9.10. 2n5786l.pdf Size:149K _semelab

2N5782L
2N5782L

SILICON NPN TRANSISTOR 2N5786L Low Saturation Voltage. High Gain At High Current. Hermetic TO5 (TO-205AA) Metal Package. Ideally suited for General Purpose Amplifier Applications. High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 45V VCER RBE = 100 Collect

9.11. 2n5785.pdf Size:11K _semelab

2N5782L

2N5785Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 65V dia.IC = 3.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

9.12. 2n5785n1.pdf Size:340K _semelab

2N5782L
2N5782L

NPN SILICON SWITCHING TRANSISTOR 2N5785N1 Hermetic SMD0.5 Metal package. Ideally Suited for Linear Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 65V VCEO Collector Emitter Voltage 50V VEBO Emitter Base Voltage 5V IC Continuous Collecto

9.13. 2n5781.pdf Size:11K _semelab

2N5782L

2N5781Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 3.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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