2N6039G Datasheet. Specs and Replacement

Type Designator: 2N6039G  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 25 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO225AA

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2N6039G datasheet

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2N6039G

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors Plastic Darlington complementary silicon power transistors are 4.0 AMPERES DARLINGTON designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS ESD Ratings... See More ⇒

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2N6039G

Order this document MOTOROLA by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 (See 2N5630) Plastic Darlington Complementary Silicon Power PNP Transistors 2N6035 . . . designed for general purpose amplifier and low speed switching applications. High DC Current Gain 2N6036* hFE = 2000 (Typ) @ IC = 2.0 Adc NPN Collector Emitter Sustaining Voltage @ ... See More ⇒

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2N6039G

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2N6036 2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6036 IS A STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER 1 2 3 DESCRIPTION The 2N6036 and 2N6039 are complementary SOT-32 silicon power Darlington transistors ... See More ⇒

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Detailed specifications: 2N5883G, 2N5884G, 2N5885G, 2N5886G, 2N6034G, 2N6035G, 2N6036G, 2N6038G, BC547B, 2N6040G, 2N6042G, 2N6043G, 2N6045G, 2N6052G, 2N6107G, 2N6109G, 2N6111G

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