All Transistors. 2B3440CSM4R Datasheet

 

2B3440CSM4R Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2B3440CSM4R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: LCC3

 2B3440CSM4R Transistor Equivalent Substitute - Cross-Reference Search

   

2B3440CSM4R Datasheet (PDF)

 ..1. Size:94K  semelab
 2b3440csm4r.pdf

2B3440CSM4R 2B3440CSM4R

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R High Voltage Hermetic Ceramic Surface Mount Package. Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) 2N3439 2N3440Symbols Parame

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 17322

 

 
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