All Transistors. 2B3440CSM4R Datasheet

 

2B3440CSM4R Datasheet and Replacement


   Type Designator: 2B3440CSM4R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: LCC3
 

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2B3440CSM4R Datasheet (PDF)

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2B3440CSM4R

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R High Voltage Hermetic Ceramic Surface Mount Package. Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) 2N3439 2N3440Symbols Parame

Datasheet: 2N6286G , 2N6287G , 2N6288G , 2N6292G , 2N6299SMD , 2N6299SMD05 , 2N6301SMD , 2N6301SMD05 , AC125 , 2PA1576 , 2PA1774 , 2PA1774M , 2PA1774QM , 2PA1774RM , 2PA1774SM , 2PB1424 , 2PB709AQW .

History: BC461-4 | HA7631

Keywords - 2B3440CSM4R transistor datasheet

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