2PD2150 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2PD2150
SMD Transistor Code: M2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 220 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT89
2PD2150 Transistor Equivalent Substitute - Cross-Reference Search
2PD2150 Datasheet (PDF)
2pd2150.pdf
2PD215020 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 2 January 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: 2PB1424.1.2 Features Low collector-emitter saturation voltage VCEsat Hi
2pd2150.pdf
2PD215020 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 2 January 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: 2PB1424.1.2 Features Low collector-emitter saturation voltage VCEsat Hi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
