2PD2150 Specs and Replacement
Type Designator: 2PD2150
SMD Transistor Code: M2
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 220 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: SOT89
2PD2150 Substitution
- BJT ⓘ Cross-Reference Search
2PD2150 datasheet
2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 2 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement 2PB1424. 1.2 Features Low collector-emitter saturation voltage VCEsat Hi... See More ⇒
2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 2 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement 2PB1424. 1.2 Features Low collector-emitter saturation voltage VCEsat Hi... See More ⇒
Detailed specifications: 2PC4617M, 2PC4617QM, 2PC4617QMB, 2PC4617RM, 2PC4617RMB, 2PC4617S, 2PC4617SM, 2PD1820AQ, 2SD1047, 2PD601A, 2PD601AQ, 2PD601AQW, 2PD601AR, 2PD601ARL, 2PD601ART, 2PD601AS, 2PD601ASL
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