All Transistors. 1DI200A-120 Datasheet

 

1DI200A-120 Datasheet, Equivalent, Cross Reference Search

Type Designator: 1DI200A-120

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1400 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 1200 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 200 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: MODULE

1DI200A-120 Transistor Equivalent Substitute - Cross-Reference Search

 

1DI200A-120 Datasheet (PDF)

1.1. 1di200a-120.pdf Size:31K _upd

1DI200A-120

FUJI POWER TRANSISTOR MODULE 1DI200A-120 (200A) パワートランジスタモジュール 外形寸法:Outline Drawings パワートランジスタモジュール 外形寸法: パワートランジスタモジュール 外形寸法: パワートランジスタモジュール 外形寸法: パワートランジスタモジュール 外形寸法: [mm] POWER TRANSISTOR MODULE POWER TRAN

4.1. 1di200e-055.pdf Size:183K _upd

1DI200A-120
1DI200A-120



4.2. 1di200z-100.pdf Size:97K _upd

1DI200A-120



 4.3. 1di200k-055.pdf Size:150K _upd

1DI200A-120
1DI200A-120

 Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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1DI200A-120
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