4SCG5714 Datasheet, Equivalent, Cross Reference Search
Type Designator: 4SCG5714
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: DIP14A
4SCG5714 Transistor Equivalent Substitute - Cross-Reference Search
4SCG5714 Datasheet (PDF)
..1. Size:243K china
4scg5714.pdf
4scg5714.pdf
4SCG5714 PNP A B C PCM Ta=25 3004 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 25 35 50 V V(BR)CEO ICE=0.1mA 20 30 45 V V(BR) EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.2 A IEBO VEB=2V 0.1 A
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
