All Transistors. 4SCG5714 Datasheet

 

4SCG5714 Datasheet and Replacement


   Type Designator: 4SCG5714
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: DIP14A
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4SCG5714 Datasheet (PDF)

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4SCG5714

4SCG5714 PNP A B C PCM Ta=25 3004 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 25 35 50 V V(BR)CEO ICE=0.1mA 20 30 45 V V(BR) EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.2 A IEBO VEB=2V 0.1 A

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: NTE2547 | DDTA144GCA | R8118 | CMUT5087E | SBC847BPDXV6 | RN1909 | SEBT9014

Keywords - 4SCG5714 transistor datasheet

 4SCG5714 cross reference
 4SCG5714 equivalent finder
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