4SDG110 Datasheet. Specs and Replacement
Type Designator: 4SDG110 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: DIP14A
4SDG110 Substitution
- BJT ⓘ Cross-Reference Search
4SDG110 datasheet
4SDG110 NPN A B C PCM Ta=25 300 4 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 25 35 50 V V(BR)CEO ICE=0.1mA 20 30 45 V V(BR) EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.01 A ICEO VCE=10V 0.1 A IEBO VEB=2V 0.1 A... See More ⇒
Detailed specifications: 30C02MH-TL-E, 30C02MH-TL-H, 4N1815PGP, 4N772GP, 4SCG110, 4SCG120K, 4SCG160, 4SCG5714, TIP3055, 4SDG110K, 50A02CH-TL-E, 50A02CH-TL-H, 50A02MH-TL-E, 50A02SS-TL-E, 50C02CH-TL-E, 50C02MH-TL-E, 50C02SS-TL-E
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