55GN01MA-TL-E Datasheet, Equivalent, Cross Reference Search
Type Designator: 55GN01MA-TL-E
SMD Transistor Code: ZD
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3000 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-323
55GN01MA-TL-E Transistor Equivalent Substitute - Cross-Reference Search
55GN01MA-TL-E Datasheet (PDF)
55gn01ma 55gn01ma.pdf
Ordering number : ENA1114A55GN01MARF Transistorhttp://onsemi.com10V, 70mA, fT=5.5GHz, NPN Single MCPFeatures High cut-off frequency : fT=5.5GHz typ High gain : S21e =10dB typ (f=1GHz) 2SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-to-Emitter Voltage VCEO 10 VEmitter-
55gn01ca.pdf
Ordering number : ENA1111 55GN01CASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF Wide-band Low-noise55GN01CAAmplifier ApplicationsFeatures High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=9.5dB typ (f=1GHz).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V
55gn01fa.pdf
55GN01FAOrdering number : ENA1113ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF Wide-band Low-noise55GN01FAAmplifier ApplicationsFeatures High cut-off frequency : fT=5.5GHz typ High gain : S21e =11dB typ (f=1GHz) 2 =19dB typ (f=400MHz) Ultrasmall package permitting applied sets to be small and slim Halogen free compliance
55gn01ca-tb-e.pdf
Ordering number : ENA1111A55GN01CARF Transistorhttp://onsemi.com10V, 70mA, fT=5.5GHz, NPN Single CPFeatures High cutoff frequency : fT=5.5GHz typ High gain : S21e =9.5dB typ (f=1GHz) 2SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-to-Emitter Voltage VCEO 10 VEmitter-t
55gn01fa.pdf
DATA SHEETwww.onsemi.comRF Transistor3110 V, 70 mA, fT = 5.5 GHz, NPN Single SSFP2SOT-623 / SSFP55GN01FACASE 631ACFeatures High Cut-off Frequency: fT = 5.5 GHz TypMARKING DIAGRAM High Gain: S21e2 = 11 dB Typ (f = 1 GHz)S21e2 = 19 dB Typ (f = 400 MHz) Ultrasmall Package Permitting Applied Sets to be Small and SlimZD This Device is Pb-Free
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
