55GN01MA-TL-E Specs and Replacement

Type Designator: 55GN01MA-TL-E

SMD Transistor Code: ZD

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3000 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-323

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55GN01MA-TL-E datasheet

 6.1. Size:217K  onsemi

55gn01ma 55gn01ma.pdf pdf_icon

55GN01MA-TL-E

Ordering number ENA1114A 55GN01MA RF Transistor http //onsemi.com 10V, 70mA, fT=5.5GHz, NPN Single MCP Features High cut-off frequency fT=5.5GHz typ High gain S21e =10dB typ (f=1GHz) 2 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-... See More ⇒

 8.1. Size:51K  sanyo

55gn01ca.pdf pdf_icon

55GN01MA-TL-E

Ordering number ENA1111 55GN01CA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise 55GN01CA Amplifier Applications Features High cutoff frequency fT= 5.5GHz typ. High gain S21e 2=9.5dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V... See More ⇒

 8.2. Size:360K  sanyo

55gn01fa.pdf pdf_icon

55GN01MA-TL-E

55GN01FA Ordering number ENA1113A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise 55GN01FA Amplifier Applications Features High cut-off frequency fT=5.5GHz typ High gain S21e =11dB typ (f=1GHz) 2 =19dB typ (f=400MHz) Ultrasmall package permitting applied sets to be small and slim Halogen free compliance... See More ⇒

 8.3. Size:204K  onsemi

55gn01ca-tb-e.pdf pdf_icon

55GN01MA-TL-E

Ordering number ENA1111A 55GN01CA RF Transistor http //onsemi.com 10V, 70mA, fT=5.5GHz, NPN Single CP Features High cutoff frequency fT=5.5GHz typ High gain S21e =9.5dB typ (f=1GHz) 2 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-t... See More ⇒

Detailed specifications: 5487-2, 5488-1, 5488-2, 5552-4, 55GN01CA-TB-E, 55GN01FA, 55GN01FA-TL-H, 55GN01MA, MJE340, 753DCSM, 8050C, 8050SS, 8050SS-C, 8050SS-D, 8550C, 8550SS, 8550SS-C

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