All Transistors. 9013S Datasheet

 

9013S Datasheet and Replacement


   Type Designator: 9013S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 64
   Noise Figure, dB: -
   Package: TO92
 

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9013S Datasheet (PDF)

 ..1. Size:1012K  jiangsu
9013s.pdf pdf_icon

9013S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 9013S TRANSISTOR (NPN) TO-92 FEATURES Complementary to 9012S 1. EMITTER Excellent hFE linearity 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. BASESymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO

 0.1. Size:350K  kec
ktc9013sc.pdf pdf_icon

9013S

SEMICONDUCTOR KTC9013SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESExcellent hFE Linearity.Complementary to KTC9012SC.DIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90MAXIMUM RATING (Ta=25)J 0.10K 0.00 ~ 0.10CHARACTERISTIC SYMBO

 0.2. Size:353K  kec
ktc9013s.pdf pdf_icon

9013S

SEMICONDUCTOR KTC9013STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_+Excellent hFE Linearity. A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9012S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)L

 0.3. Size:276K  willas
9013plt1 9013qlt1 9013rlt1 9013slt1.pdf pdf_icon

9013S

FM120-M WILLASTHRU9013xLT1General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductNPN Silicon Package outlineFeatures Batch process design, excellent power dissipation offersFEATURE better reverse leakage current and thermal resistance.SOD-123HWe declare that the material of product complianc

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BFP196W | BC857BQ | JC328-25 | 3DA98 | BCX68 | BCP1616A | BCX56

Keywords - 9013S transistor datasheet

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