B511 Specs and Replacement
Type Designator: B511
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
B511 Substitution
- BJT ⓘ Cross-Reference Search
B511 datasheet
B511 PNP silicon APPLICATION Audio Frequency Power Amplifier. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -35 V TO-220 1 Emitter-base voltage VEBO -5 V 1.Base 2.Collector 3.Emitter Collector current IC -1.5 A PC Collector Power Dissipation 1.75 10 W Jun... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB511 DESCRIPTION With TO-220C package Complement to type 2SD325 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base... See More ⇒
isc Silicon PNP Power Transistor 2SB511 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max) @I = -1.5A CE(sat) C Complement to Type 2SD325 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 5W AF power amplifier output applications. ABSOLUTE MA... See More ⇒
Detailed specifications: 8050SS-C, 8050SS-D, 8550C, 8550SS, 8550SS-C, 8550SS-D, 9012S, 9013S, TIP127, B562, B564A, B624, B631K, B709AR, B722, B764, B772-GR
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