All Transistors. BC807-25WT1G Datasheet

 

BC807-25WT1G Datasheet and Replacement


   Type Designator: BC807-25WT1G
   SMD Transistor Code: 5B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.46 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SC-70
 

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BC807-25WT1G Datasheet (PDF)

 ..1. Size:72K  onsemi
 bc807-25wt1g bc807-40wt1g.pdf pdf_icon

BC807-25WT1G

BC807-25W, BC807-40WGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andCOLLECTORPPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitColl

 0.1. Size:74K  onsemi
 sbc807-25wt1g.pdf pdf_icon

BC807-25WT1G

BC807-25W, BC807-40WGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andCOLLECTORPPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitColl

 0.2. Size:78K  lrc
 lbc807-25wt1g.pdf pdf_icon

BC807-25WT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

 0.3. Size:78K  lrc
 lbc807-25wt1g lbc807-25wt3g.pdf pdf_icon

BC807-25WT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

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Datasheet: BC69-25PAS , BC69PA , BC69PAS , BC807-16LT1G , BC807-16LT3G , BC807-25LT1G , BC807-25LT3G , BC807-25QA , 2SC828 , BC807-40LT1G , BC807-40LT3G , BC807-40QA , BC807-40WT1G , BC808-25LT1G , BC808-40LT1G , BC808W , BC817-16-G .

History: BCW93K | NESG2031M16 | BLV90-SL

Keywords - BC807-25WT1G transistor datasheet

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