BC848BW-G Datasheet, Equivalent, Cross Reference Search
Type Designator: BC848BW-G
SMD Transistor Code: 1K
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT323
BC848BW-G Transistor Equivalent Substitute - Cross-Reference Search
BC848BW-G Datasheet (PDF)
bc848bw-g bc847bw-g.pdf
Small Signal TransistorBC846AW-G Thru. BC848CW-G (NPN)RoHS DeviceFeatures -Power dissipationPCM: 0.15W (@TA=25C)SOT-323 -Collector currentICM: 0.1A0.087 (2.20) -Collector-base voltage0.079 (2.00)VCBO: BC846W=80V3BC847W=50V0.053(1.35)BC848W=30V0.045(1.15) -Operating and storage junction temperature 1 2range: TJ, TSTG= -55 to +150C0.006 (0.15)0.055
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BC846AW-AU ~ BC850CW-AUNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWER 250 mWattVOLTAGEFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic
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BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B Features External dimensions (Unit : mm) 1) BVCEO minimum is 30V (IC=1mA) BC848BW2) Complements the BC858B / BC858BW. 2.00.21.30.1 0.90.10.65 0.650.2 0.70.1(1) (2)0~0.1 (3)+0.10.3 (1) Emitter -0 0.150.05ROHM : UMT3 (2) BaseAll terminals have same dimensionsEIAJ : SC-7
bc848bw bc848b.pdf
BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B Features External dimensions (Unit : mm) 1) BVCEO minimum is 30V (IC=1mA) BC848BW2) Complements the BC858B / BC858BW. SOT-3232.00.21.30.1 0.90.10.65 0.650.2 0.70.1(1) (2)0~0.1 (3)+0.10.3 (1) Emitter -0 0.150.05ROHM : UMT3 (2) BaseAll terminals have same dimensionsEI
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BC846AW - BC848CWNPN SURFACE MOUNT SMALL SIGNAL TRANSISTORFeatures Ideally Suited for Automatic InsertionSOT-323 Complementary PNP Types AvailableA(BC856W-BC858W) Dim Min MaxCA For Switching and AF Amplifier Applications 0.25 0.40B1.15 1.35Mechanical DataB CC2.00 2.20 Case: SOT-323, Molded PlasticD0.65 NominalB E Case material - UL Flammability Rating
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BC847...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC847BL3 is not qualified according AEC Q101Type Marking Pin
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nsvbc848bwt1g.pdf
BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC
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BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC
bc848bwt1g.pdf
BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 Pb-Free Packages are AvailableBASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value UnitSC-7
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LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site andControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATIO
lbc848bwt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC846AWT1G,BWT1GNPN SiliconLBC847AWT1G,BWT1GWe declare that the material of product compliance with RoHS requirements.CWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.LBC848AWT1G,BWT1GCWT1G( )ORDERING INFORMATION Pb Free
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BC846AW ~ BC850CWNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWERVOLTAGE 250 mWattFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per
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RoHS RoHSCOMPLIANT COMPLIANTBC846AW THRU BC848CW NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .