BC857CWR Datasheet and Replacement
Type Designator: BC857CWR
SMD Transistor Code: 3GTR
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.275 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 420
Noise Figure, dB: -
Package: SOT323
BC857CWR Substitution
BC857CWR Datasheet (PDF)
bc857cwr bc857bwr.pdf
BC856W SERIESBC857W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE
bc856w bc856aw bc856bw bc857w bc857aw bc857bw bc857cw bc858w.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102BC856W; BC857W; BC858WPNP general purpose transistorsProduct data sheet 2002 Feb 04Supersedes data of 1999 Apr 12NXP Semiconductors Product data sheetBC856W; BC857W; PNP general purpose transistorsBC858WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitter
bc856a bc856b bc856bw bc857a bc857b bc857bf bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bl3 bc858bw bc858c bc858cw bc859b bc859c bc860b bc860bw bc860cw.pdf
BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20
bc857a bc857b bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bw bc858c bc858cw bc859c bc860b bc860bw bc860cw.pdf
BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin
Datasheet: BC857BWR , BC857BWT1G , BC857CDW1T1G , BC857CLT1G , BC857CLT3G , BC857CM , BC857CMB , BC857CW-G , 2SC2073 , BC857CWT1G , BC857LT1 , BC857M , BC857QAS , BC858ALT1G , BC858AW-G , BC858AWT1G , BC858BLT1G .
History: DRA5A15E | HD1F2Q | DTA124EUAFRA | DRA5A14Y | DRA5A14T | HD1A4A | DRA5A23J
Keywords - BC857CWR transistor datasheet
BC857CWR cross reference
BC857CWR equivalent finder
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History: DRA5A15E | HD1F2Q | DTA124EUAFRA | DRA5A14Y | DRA5A14T | HD1A4A | DRA5A23J
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