BCM847DS Datasheet. Specs and Replacement

Type Designator: BCM847DS  📄📄 

SMD Transistor Code: R6

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 1.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT457

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BCM847DS datasheet

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Detailed specifications: BC858LT1, BC868-10, BC868-16, BCM61B, BCM62B, BCM846BS, BCM847BS, BCM847BV, TIP35C, BCM856BS, BCM856DS, BCM857BS, BCM857BV, BCM857DS, BCP3904, BCP53-10T1G, BCP5316Q

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