BCP5616Q Specs and Replacement

Type Designator: BCP5616Q

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT223

 BCP5616Q Substitution

- BJT ⓘ Cross-Reference Search

 

BCP5616Q datasheet

 ..1. Size:375K  diodes

bcp5616q.pdf pdf_icon

BCP5616Q

BCP5616Q 80V NPN MEDIUM POWER TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor (BJT) is designed to meet the Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. AF Driver and Output Stages Mechanical Data Features Case SOT223 BVCEO > 80V Case Material Molded Plastic, Gree... See More ⇒

 0.1. Size:424K  diodes

bcp54ta bcp5410ta bcp5416ta bcp5416qta bcp55ta bcp5510ta bcp5516ta bcp56ta bcp5610ta bcp5616ta bcp5616tc bcp5616qta bcp5616qtc.pdf pdf_icon

BCP5616Q

BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data BVCEO > 45V, 60V & 80V Case SOT223 IC = 1A High Continuous Collector Current Case Material Molded Plastic. Green Molding Compound; ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity Level 1 per J-STD-020 Low Saturat... See More ⇒

 9.1. Size:200K  motorola

bcp56t1r.pdf pdf_icon

BCP5616Q

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP56T1/D BCP56T1 NPN Silicon SERIES Epitaxial Transistor Motorola Preferred Device These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for MEDIUM POWER medium power surface mount applications. NPN SILICON High Cu... See More ⇒

 9.2. Size:48K  philips

bcp54 bcp55 bcp56 3.pdf pdf_icon

BCP5616Q

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP54; BCP55; BCP56 NPN medium power transistors 1999 Apr 08 Product specification Supersedes data of 1997 Apr 08 Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2, 4 collector AP... See More ⇒

Detailed specifications: BCP3904, BCP53-10T1G, BCP5316Q, BCP53-16T1G, BCP53-16T3G, BCP53T1G, BCP56-10T1G, BCP56-10T3G, NJW0281G, BCP56-16T1G, BCP56-16T3G, BCP56T1G, BCP56T3G, BCP68T1G, BCP69T1G, BCW30LT1G, BCW32LT1G

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