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BCP5616Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCP5616Q
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 25 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT223
 

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BCP5616Q Datasheet (PDF)

 ..1. Size:375K  diodes
bcp5616q.pdf pdf_icon

BCP5616Q

BCP5616Q 80V NPN MEDIUM POWER TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor (BJT) is designed to meet the Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. AF Driver and Output Stages Mechanical Data Features Case: SOT223 BVCEO > 80V Case Material: Molded Plastic, Gree

 0.1. Size:424K  diodes
bcp54ta bcp5410ta bcp5416ta bcp5416qta bcp55ta bcp5510ta bcp5516ta bcp56ta bcp5610ta bcp5616ta bcp5616tc bcp5616qta bcp5616qtc.pdf pdf_icon

BCP5616Q

BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data BVCEO > 45V, 60V & 80V Case: SOT223 IC = 1A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Saturat

 9.1. Size:200K  motorola
bcp56t1r.pdf pdf_icon

BCP5616Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP56T1/DBCP56T1NPN SiliconSERIESEpitaxial TransistorMotorola Preferred DeviceThese NPN Silicon Epitaxial transistors are designed for use in audio amplifierapplications. The device is housed in the SOT-223 package, which is designed forMEDIUM POWERmedium power surface mount applications.NPN SILICON High Cu

 9.2. Size:48K  philips
bcp54 bcp55 bcp56 3.pdf pdf_icon

BCP5616Q

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BCP54; BCP55; BCP56NPN medium power transistors1999 Apr 08Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationNPN medium power transistors BCP54; BCP55; BCP56FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2, 4 collectorAP

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History: GF142 | NKT241 | DTA143EUA

 

 
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