BCW33LT3G Datasheet, Equivalent, Cross Reference Search
Type Designator: BCW33LT3G
SMD Transistor Code: D3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 420
Noise Figure, dB: -
Package: SOT23
BCW33LT3G Transistor Equivalent Substitute - Cross-Reference Search
BCW33LT3G Datasheet (PDF)
bcw33lt3g.pdf
BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U
bcw33lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW33LT1/DGeneral Purpose TransistorBCW33LT1NPN SiliconCOLLECTOR313BASE122EMITTERMAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value UnitSOT23 (TO236AB)CollectorEmitter Voltage VCEO 20 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current
bcw33lt1g sbcw33lt1g.pdf
BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT-23(TO-236)MAXIMUM RATINGSCASE 318-08STYLE 6Rating Symbol Value UnitC
bcw33lt1g.pdf
BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U
bcw33lt1.pdf
BCW33LT1General Purpose TransistorNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 32 Vdc2Emitter - Base Voltage VEBO 5.0 Vdc EMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CHARACTERISTICSCharacteristic Symb
bcw33lt1-d.pdf
BCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS1BASERating Symbol Value UnitCollector - Emitter Voltage VCEO 32 Vdc2Collector - Base Voltage VCBO 32 VdcEMITTEREmitter - Base Voltage VEBO 5.0 Vdc3Collector Current - Continuous IC 100 mAd
sbcw33lt1g.pdf
BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
