BCW33LT3G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCW33LT3G
Código: D3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 32
V
Tensión colector-emisor (Vce): 32
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300
MHz
Capacitancia de salida (Cc): 4
pF
Ganancia de corriente contínua (hfe): 420
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar BCW33LT3G
BCW33LT3G
Datasheet (PDF)
..1. Size:148K onsemi
bcw33lt3g.pdf
BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U
7.1. Size:371K motorola
bcw33lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW33LT1/DGeneral Purpose TransistorBCW33LT1NPN SiliconCOLLECTOR313BASE122EMITTERMAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value UnitSOT23 (TO236AB)CollectorEmitter Voltage VCEO 20 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current
7.2. Size:281K onsemi
bcw33lt1g sbcw33lt1g.pdf
BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT-23(TO-236)MAXIMUM RATINGSCASE 318-08STYLE 6Rating Symbol Value UnitC
7.3. Size:148K onsemi
bcw33lt1g.pdf
BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U
7.4. Size:96K onsemi
bcw33lt1.pdf
BCW33LT1General Purpose TransistorNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 32 Vdc2Emitter - Base Voltage VEBO 5.0 Vdc EMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CHARACTERISTICSCharacteristic Symb
7.5. Size:257K onsemi
bcw33lt1-d.pdf
BCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS1BASERating Symbol Value UnitCollector - Emitter Voltage VCEO 32 Vdc2Collector - Base Voltage VCBO 32 VdcEMITTEREmitter - Base Voltage VEBO 5.0 Vdc3Collector Current - Continuous IC 100 mAd
7.6. Size:144K onsemi
sbcw33lt1g.pdf
BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U
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