BCW66GLT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: BCW66GLT1G
SMD Transistor Code: EG
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT23
BCW66GLT1G Transistor Equivalent Substitute - Cross-Reference Search
BCW66GLT1G Datasheet (PDF)
bcw66glt1g.pdf
BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23Compliant*(TO-236)CASE 318-08 STYLE 6MAXIMUM RATINGSCOLLECTORRatin
bcw66glt1g sbcw66glt1g.pdf
BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant SOT-23(TO-236)CASE 318 STYLE 6MAXIMUM RATINGSCOLLECTORRating Symbol Va
sbcw66glt1g.pdf
BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23Compliant*(TO-236)CASE 318-08 STYLE 6MAXIMUM RATINGSCOLLECTORRatin
bcw66glt1-d.pdf
BCW66GLT1GGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO 45 VdcCollector-Base Voltage VCBO 75 Vdc3Emitter-Base Voltage VEBO 5.0 VdcSOT-23CASE 318Collector Current - Continuo
bcw66glt1.pdf
FM120-M WILLASBCW66GLT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesNPN Silicon Batch process design, excellent power dissipation offers better reverse leakage current and the We declare that the material of product rmal resistance. SOD-123H Low profile
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SB1189R
