BFG520XR Specs and Replacement

Type Designator: BFG520XR

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 9000 MHz

Collector Capacitance (Cc): 0.6 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT143B SOT143R

 BFG520XR Substitution

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BFG520XR datasheet

 ..1. Size:117K  philips

bfg520 bfg520x bfg520xr cnv 3.pdf pdf_icon

BFG520XR

DISCRETE SEMICONDUCTORS DATA SHEET BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR FEATURES PINNING 43 fpage High power gain PIN DESCRIPTION Low noise figure BFG520 (Fig.1) Code N36... See More ⇒

 ..2. Size:316K  philips

bfg520xr n.pdf pdf_icon

BFG520XR

BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new lin... See More ⇒

 ..3. Size:316K  nxp

bfg520xr.pdf pdf_icon

BFG520XR

BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new lin... See More ⇒

 7.1. Size:209K  inchange semiconductor

bfg520x.pdf pdf_icon

BFG520XR

INCHANGE Semiconductor isc Silicon NPN RF Transistor BFG520/X DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHz CE C High Gain S 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz 21 CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear b... See More ⇒

Detailed specifications: BF258DCSM, BF422G, BF720T1G, BF721T1G, BF748, BF822W, BFG10WX, BFG10X, D882, BFR92AC1A, BFR92C1A, BFT29X, BFT30CSM, BFT30DCSM, BFT32A, BFT33A, BFT33B

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