Биполярный транзистор BFG520XR
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BFG520XR
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3
W
Макcимально допустимое напряжение коллектор-база (Ucb): 20
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2.5
V
Макcимальный постоянный ток коллектора (Ic): 0.07
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 9000
MHz
Ёмкость коллекторного перехода (Cc): 0.6
pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора:
SOT143B
SOT143R
Аналоги (замена) для BFG520XR
BFG520XR
Datasheet (PDF)
..1. Size:117K philips
bfg520 bfg520x bfg520xr cnv 3.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETBFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XRFEATURES PINNING43fpage High power gainPIN DESCRIPTION Low noise figureBFG520 (Fig.1) Code: N36
..2. Size:316K philips
bfg520xr n.pdf 
BFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorRev. 04 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin
..3. Size:316K nxp
bfg520xr.pdf 
BFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorRev. 04 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin
7.1. Size:209K inchange semiconductor
bfg520x.pdf 
INCHANGE Semiconductorisc Silicon NPN RF Transistor BFG520/XDESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear b
8.1. Size:305K philips
bfg520w x n.pdf 
BFG520W; BFG520W/XNPN 9 GHz wideband transistorsRev. 04 21 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links ass
8.2. Size:124K philips
bfg520w bfg520wx 3.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D123BFG520W; BFG520W/XNPN 9 GHz wideband transistors1998 Oct 02Product specificationSupersedes data of August 1995Philips Semiconductors Product specificationNPN 9 GHz wideband transistors BFG520W; BFG520W/XFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG250W BFG250W/X High transition
8.4. Size:238K inchange semiconductor
bfg520.pdf 
isc Silicon NPN RF Transistor BFG520DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.ABSO
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