All Transistors. CH858BGP Datasheet

 

CH858BGP Datasheet and Replacement


   Type Designator: CH858BGP
   SMD Transistor Code: J18_3K_J19
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 125
   Noise Figure, dB: -
   Package: SOT23
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CH858BGP Datasheet (PDF)

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CH858BGP

CHENMKO ENTERPRISE CO.,LTDCH858BGPSURFACE MOUNT PNP General Purpose TransistorVOLTAGE 30 Volts CURRENT 0.1 AmpereAPPLICATION* AF input stages and driver applicationon equipment.* Other general purpose applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High sat

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