CHBTA13GP Datasheet, Equivalent, Cross Reference Search
Type Designator: CHBTA13GP
SMD Transistor Code: NI
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: SOT23
CHBTA13GP Transistor Equivalent Substitute - Cross-Reference Search
CHBTA13GP Datasheet (PDF)
..1. Size:62K chenmko
chbta13gp.pdf
chbta13gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHBTA13GPSURFACE MOUNT NPN Darlington TransistorVOLTAGE 30 Volts CURRENT 1.2 AmpereAPPLICATION* High current gain applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* High current (Max.=1200mA). * Suitable for high packing density.* Low voltage (Max.=30V) .* High saturation current and current gain capability.(1)(3)CONSTRUC
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
