CHBTA13GP Specs and Replacement

Type Designator: CHBTA13GP

SMD Transistor Code: NI

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 1.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 125 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 5000

Noise Figure, dB: -

Package: SOT23

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CHBTA13GP datasheet

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CHBTA13GP

CHENMKO ENTERPRISE CO.,LTD CHBTA13GP SURFACE MOUNT NPN Darlington Transistor VOLTAGE 30 Volts CURRENT 1.2 Ampere APPLICATION * High current gain applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * High current (Max.=1200mA). * Suitable for high packing density. * Low voltage (Max.=30V) . * High saturation current and current gain capability. (1) (3) CONSTRUC... See More ⇒

Detailed specifications: CH847SGP, CH847UPNGP, CH848BGP, CH857SGP, CH858BGP, CH867UNPGP, CH867UPNGP, CH882GP, TIP41, CHUMT1GP, CHUMX1GP, CHUMY1GP, CHUMZ1GP, CJ10P20DE6, CJ201NL, CJ303NL, CJ303PL

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