CJ10P20DE6 Specs and Replacement

Type Designator: CJ10P20DE6

SMD Transistor Code: *718

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: SOT-23-6L

 CJ10P20DE6 Substitution

- BJT ⓘ Cross-Reference Search

 

CJ10P20DE6 datasheet

 ..1. Size:513K  jiangsu

 cj10p20de6.pdf pdf_icon

CJ10P20DE6

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-6L Plastic-Encapsulate Transistors CJ10P20DE6 TRANSISTOR (PNP) SOT-23-6L FEATURES Suitable for reducing set s size as a result from enabling high-density mounting due to one pin small packages Low series resistance Low capacitance MARKING MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Val... See More ⇒

Detailed specifications: CH867UNPGP, CH867UPNGP, CH882GP, CHBTA13GP, CHUMT1GP, CHUMX1GP, CHUMY1GP, CHUMZ1GP, TIP122, CJ201NL, CJ303NL, CJ303PL, CJ818B, CJL818C, CJP718, CM4209, CM45-12A

Keywords - CJ10P20DE6 pdf specs

 CJ10P20DE6 cross reference

 CJ10P20DE6 equivalent finder

 CJ10P20DE6 pdf lookup

 CJ10P20DE6 substitution

 CJ10P20DE6 replacement