All Transistors. CJ10P20DE6 Datasheet

 

CJ10P20DE6 Datasheet and Replacement


   Type Designator: CJ10P20DE6
   SMD Transistor Code: *718
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: SOT-23-6L
 

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CJ10P20DE6 Datasheet (PDF)

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CJ10P20DE6

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-6L Plastic-Encapsulate Transistors CJ10P20DE6 TRANSISTOR (PNP) SOT-23-6LFEATURES Suitable for reducing sets size as a result from enabling high-density mounting due to one pin small packages Low series resistance Low capacitance MARKING: MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Val

Datasheet: CH867UNPGP , CH867UPNGP , CH882GP , CHBTA13GP , CHUMT1GP , CHUMX1GP , CHUMY1GP , CHUMZ1GP , 2SA1943 , CJ201NL , CJ303NL , CJ303PL , CJ818B , CJL818C , CJP718 , CM4209 , CM45-12A .

History: MMUN2234L

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