CJL818C Datasheet, Equivalent, Cross Reference Search
Type Designator: CJL818C
SMD Transistor Code: *818C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-23-6L
CJL818C Transistor Equivalent Substitute - Cross-Reference Search
CJL818C Datasheet (PDF)
..1. Size:523K jiangsu
cjl818c.pdf
cjl818c.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-6L Plastic-Encapsulate Transistors CJL818C TRANSISTOR (PNP) DESCRIPTIONS SOT-23-6L The device is manufactured in low voltage PNP Planar T echnology with gain "Base Island layout. The resulting transistor shows exceptional high performance coupled with very low saturation voltage. FEATURE Very low collector to emitt
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
