CJL818C Specs and Replacement
Type Designator: CJL818C
SMD Transistor Code: *818C
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-23-6L
CJL818C Substitution
- BJT ⓘ Cross-Reference Search
CJL818C datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-6L Plastic-Encapsulate Transistors CJL818C TRANSISTOR (PNP) DESCRIPTIONS SOT-23-6L The device is manufactured in low voltage PNP Planar T echnology with gain "Base Island layout. The resulting transistor shows exceptional high performance coupled with very low saturation voltage. FEATURE Very low collector to emitt... See More ⇒
Detailed specifications: CHUMX1GP , CHUMY1GP , CHUMZ1GP , CJ10P20DE6 , CJ201NL , CJ303NL , CJ303PL , CJ818B , D882 , CJP718 , CM4209 , CM45-12A , CM4957 , CM5160 , CM5583 , CM5943 , CMBT3904E .
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