CM45-12A Datasheet, Equivalent, Cross Reference Search
Type Designator: CM45-12A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 512 MHz
Collector Capacitance (Cc): 95 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT-119
CM45-12A Transistor Equivalent Substitute - Cross-Reference Search
CM45-12A Datasheet (PDF)
dim400xcm45-ts.pdf
Data DIM400XCM45-TS000 IGBT Chopper Module Replaces DS6111-1 DS6111-2 January 2014 (LN31266) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 400A High Current Density Enhanced DMOS SPT IC(PK) (max) 800A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary te
dim400xcm45-ts001.pdf
Data DIM400XCM45-TS001 IGBT Chopper Module Replaces DS6110-1 DS6110-2 January 2014 (LN31265) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 4500V VCE(sat) * (typ) 2.7V 10s Short Circuit Withstand IC (max) 400A High Thermal Cycling Capability IC(PK) (max) 800A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
