CM4957 Specs and Replacement
Type Designator: CM4957
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1200 MHz
Collector Capacitance (Cc): 1.6 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO-72
CM4957 Substitution
- BJT ⓘ Cross-Reference Search
CM4957 datasheet
DATA SHEET CM4957 PNP HIGH FREQUENCY SILICON TRANSISTOR TO-72 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CM4957 is a Silicon PNP RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching applications. This device is a replacement for the 2N4957. MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VC... See More ⇒
Detailed specifications: CJ201NL, CJ303NL, CJ303PL, CJ818B, CJL818C, CJP718, CM4209, CM45-12A, 2N3906, CM5160, CM5583, CM5943, CMBT3904E, CMBT3906E, CMBTA93, CMKT2207, CMKT2222A
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