CM5160 Specs and Replacement
Type Designator: CM5160
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO-39
CM5160 Substitution
- BJT ⓘ Cross-Reference Search
CM5160 datasheet
TM Central CM5160 Semiconductor Corp. PNP HIGH FREQUENCY SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CM5160 is a silicon PNP RF transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching applications. This device is a replacement for the 2N5160. MARKING CODE FULL PART NUMBER JEDEC TO-39 CASE MAXIMUM RATIN... See More ⇒
Detailed specifications: CJ303NL, CJ303PL, CJ818B, CJL818C, CJP718, CM4209, CM45-12A, CM4957, A1941, CM5583, CM5943, CMBT3904E, CMBT3906E, CMBTA93, CMKT2207, CMKT2222A, CMKT2907A
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