CMLT8099 Datasheet and Replacement
Type Designator: CMLT8099
SMD Transistor Code: C89
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-563
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CMLT8099 Datasheet (PDF)
cmlt8099.pdf

CMLT8099www.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT8099 consists of two individual, isolated 8099 NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal general purpose amplifier applications.MARKING C
cmlt8099m.pdf

CMLT8099Mwww.centralsemi.comSURFACE MOUNT SILICONDUAL, MATCHEDDESCRIPTION:NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT8099M consists of two individual, isolated 8099 NPN silicon transistors with matched VBE(ON) characteristics. This device is manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package.MARKING CODE: 8CMSOT-563 CASE
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: KT8107D2 | 2SC2507 | 2N2292 | UN9217R | 2N1056 | 2SC999A | ECG2306
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History: KT8107D2 | 2SC2507 | 2N2292 | UN9217R | 2N1056 | 2SC999A | ECG2306



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