CMNT3906E Datasheet, Equivalent, Cross Reference Search
Type Designator: CMNT3906E
SMD Transistor Code: CM
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-953
CMNT3906E Transistor Equivalent Substitute - Cross-Reference Search
CMNT3906E Datasheet (PDF)
cmnt3906e.pdf
CMNT3904E NPNCMNT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNT DESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMNT3904E SILICON TRANSISTORand CMNT3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in an FEMTOmini SOT-953 packag
cmnt3904e cmnt3906e.pdf
CMNT3904E NPNCMNT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNT DESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMNT3904E SILICON TRANSISTORand CMNT3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in an FEMTOmini SOT-953 packag
cmnt3904e.pdf
CMNT3904E NPNCMNT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNT DESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMNT3904E SILICON TRANSISTORand CMNT3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in an FEMTOmini SOT-953 packag
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
