CMST6427E Specs and Replacement

Type Designator: CMST6427E

SMD Transistor Code: C46

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.275 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 15000

Noise Figure, dB: -

Package: SOT-323

 CMST6427E Substitution

- BJT ⓘ Cross-Reference Search

 

CMST6427E datasheet

 ..1. Size:406K  central

cmst6427e.pdf pdf_icon

CMST6427E

CMST6427E ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON The CENTRAL SEMICONDUCTOR CMST6427E is an DARLINGTON TRANSISTOR Enhanced Specification, SUPERmini , NPN Silicon Darlington Transistor. High DC Current gains, coupled with a Low Saturation Voltage, make this an excellent choice for industrial/consumer applications where operational effi... See More ⇒

Detailed specifications: CMPTA94, CMPTA96, CMPTH81, CMST3410, CMST5086, CMST5087, CMST5088, CMST5089, 2N3904, CMST7410, CMUT2222A, CMUT2907A, CMUT3410, CMUT3904, CMUT3906, CMUT4401, CMUT4403

Keywords - CMST6427E pdf specs

 CMST6427E cross reference

 CMST6427E equivalent finder

 CMST6427E pdf lookup

 CMST6427E substitution

 CMST6427E replacement