2N999 Specs and Replacement

Type Designator: 2N999

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 7000

Noise Figure, dB: -

Package: TO72-3

 2N999 Substitution

- BJT ⓘ Cross-Reference Search

 

2N999 datasheet

NO PDF data!

Detailed specifications: 2N992, 2N993, 2N994, 2N995, 2N995A, 2N996, 2N997, 2N998, A1015, 2NU72, 2NU73, 2NU74, 2PB601AQ, 2PB601AR, 2PB601AS, 2PB601Q, 2PB601R

Keywords - 2N999 pdf specs

 2N999 cross reference

 2N999 equivalent finder

 2N999 pdf lookup

 2N999 substitution

 2N999 replacement