CMUT3410 Datasheet, Equivalent, Cross Reference Search
Type Designator: CMUT3410
SMD Transistor Code: C43
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-523
CMUT3410 Transistor Equivalent Substitute - Cross-Reference Search
CMUT3410 Datasheet (PDF)
cmut3410.pdf
CMUT3410 NPNCMUT7410 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY LOW VCE(SAT) The CENTRAL SEMICONDUCTOR CMUT3410, and SILICON TRANSISTORSCMUT7410, are low VCE(SAT) silicon transistors in an ULTRAmini surface mount package designed for small signal general purpose amplifier and switching applications, requiring low collector emitter saturation voltage.
cmut3906.pdf
CMUT3904 NPNCMUT3906 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMUT3904, SILICON TRANSISTORSCMUT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications.MA
cmut3904.pdf
CMUT3904 NPNCMUT3906 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMUT3904, SILICON TRANSISTORSCMUT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications.MA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
