CMUT3410 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMUT3410 📄📄
Código: C43
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT-523
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CMUT3410 datasheet
cmut3410.pdf
CMUT3410 NPN CMUT7410 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY LOW VCE(SAT) The CENTRAL SEMICONDUCTOR CMUT3410, and SILICON TRANSISTORS CMUT7410, are low VCE(SAT) silicon transistors in an ULTRAmini surface mount package designed for small signal general purpose amplifier and switching applications, requiring low collector emitter saturation voltage.
cmut3906.pdf
CMUT3904 NPN CMUT3906 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT3904, SILICON TRANSISTORS CMUT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications. MA
cmut3904.pdf
CMUT3904 NPN CMUT3906 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT3904, SILICON TRANSISTORS CMUT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications. MA
Otros transistores... CMST5086, CMST5087, CMST5088, CMST5089, CMST6427E, CMST7410, CMUT2222A, CMUT2907A, C1815, CMUT3904, CMUT3906, CMUT4401, CMUT4403, CMUT5087E, CMUT5088E, CMUT5179, CMUT5401
Parámetros del transistor bipolar y su interrelación.
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