D882H Specs and Replacement
Type Designator: D882H
SMD Transistor Code: D882H
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT-89-3L
D882H Substitution
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D882H datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors D882H TRANSISTOR (NPN) SOT-89-3L FEATURE Low VCE(sat) Large current capacity 1. BASE 2. COLLECTOR 3. EMITTER MAKING D882H MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70... See More ⇒
ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector C... See More ⇒
Detailed specifications: D44H8G, D44VH10G, D45H11G, D45H1B, D45H8G, D45VH10G, D471A, D596, B772, D882M, D965ASS, D965-R, D965SS, D965-T, D965V, DBC846BPDW1T1G, DBC847BPDW1T1G
Keywords - D882H pdf specs
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