All Transistors. D965V Datasheet

 

D965V Datasheet and Replacement


   Type Designator: D965V
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 22 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1200
   Noise Figure, dB: -
   Package: TO-92
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D965V Datasheet (PDF)

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D965V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 D965V TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 13009SDL | 2SD234G | 2SA1220 | 2SA1189 | BF494C | 2SA777 | BC550CP

Keywords - D965V transistor datasheet

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