All Transistors. DBC847CPDW1T1G Datasheet

 

DBC847CPDW1T1G Datasheet and Replacement


   Type Designator: DBC847CPDW1T1G
   SMD Transistor Code: 3G
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.38 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 270
   Noise Figure, dB: -
   Package: SOT-363

 DBC847CPDW1T1G Transistor Equivalent Substitute - Cross-Reference Search

   

DBC847CPDW1T1G Datasheet (PDF)

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DBC847CPDW1T1G

Dual General Purpose Transistors Dual General Purpose Transistors NPN/PNP Duals (Complimentary) DBC846BPDW1T1G DBC847BPDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is DBC847CPDW1T1G designed for low power surface mount applications. DBC848BPDW1T1G We declare that the material of product compliance wit

Datasheet: D882M , D965ASS , D965-R , D965SS , D965-T , D965V , DBC846BPDW1T1G , DBC847BPDW1T1G , 2SD313 , DBC848BPDW1T1G , DBC848CPDW1T1G , DBMT9015 , DC0150ADJ , DC0150BDJ , DC8050 , DC9018 , DCP55-16-13 .

History: DC8050 | 9016H

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