DBC847CPDW1T1G Datasheet. Specs and Replacement

Type Designator: DBC847CPDW1T1G  📄📄 

SMD Transistor Code: 3G

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.38 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 270

Noise Figure, dB: -

Package: SOT-363

 DBC847CPDW1T1G Substitution

- BJT ⓘ Cross-Reference Search

 

DBC847CPDW1T1G datasheet

 ..1. Size:500K  dxc

 dbc846bpdw1t1g dbc847bpdw1t1g dbc847cpdw1t1g dbc848bpdw1t1g dbc848cpdw1t1g.pdf pdf_icon

DBC847CPDW1T1G

Dual General Purpose Transistors Dual General Purpose Transistors NPN/PNP Duals (Complimentary) DBC846BPDW1T1G DBC847BPDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is DBC847CPDW1T1G designed for low power surface mount applications. DBC848BPDW1T1G We declare that the material of product compliance wit... See More ⇒

Detailed specifications: D882M, D965ASS, D965-R, D965SS, D965-T, D965V, DBC846BPDW1T1G, DBC847BPDW1T1G, 2SD313, DBC848BPDW1T1G, DBC848CPDW1T1G, DBMT9015, DC0150ADJ, DC0150BDJ, DC8050, DC9018, DCP55-16-13

Keywords - DBC847CPDW1T1G pdf specs

 DBC847CPDW1T1G cross reference

 DBC847CPDW1T1G equivalent finder

 DBC847CPDW1T1G pdf lookup

 DBC847CPDW1T1G substitution

 DBC847CPDW1T1G replacement