DCP55-16-13 Datasheet. Specs and Replacement

Type Designator: DCP55-16-13  πŸ“„πŸ“„ 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 Β°C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT-223

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DCP55-16-13 datasheet

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DCP55-16-13

Product specification DCP55-16-13 SOT-223 Unit mm Features 3.50+0.2 6.50+0.2 -0.2 -0.2 Epitaxial Planar Die Construction Complementary PNP Type Available (DCP52) +0.2 0.90-0.2 3.00+0.1 -0.1 +0.3 7.00-0.3 Ideally Suited for Automated Assembly Processes 4 Ideal for Medium Power Switching or Amplification Applications 1 base 1 2 3 0.70+0.1 -0.1 2.9 ... See More ⇒

Detailed specifications: DBC847CPDW1T1G, DBC848BPDW1T1G, DBC848CPDW1T1G, DBMT9015, DC0150ADJ, DC0150BDJ, DC8050, DC9018, 2SC945, CHIMX1GP, CHIMX2GP, CHIMX3GP, CHP69GP, CHRT5993PT, CHRT5993TGP, CHRT5993WGP, CHT05GP

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