All Transistors. DCP55-16-13 Datasheet

 

DCP55-16-13 Datasheet and Replacement


   Type Designator: DCP55-16-13
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT-223

 DCP55-16-13 Transistor Equivalent Substitute - Cross-Reference Search

   

DCP55-16-13 Datasheet (PDF)

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DCP55-16-13

Product specification DCP55-16-13 SOT-223 Unit mm Features 3.50+0.2 6.50+0.2 -0.2 -0.2 Epitaxial Planar Die Construction Complementary PNP Type Available (DCP52) +0.2 0.90-0.2 3.00+0.1 -0.1 +0.3 7.00-0.3 Ideally Suited for Automated Assembly Processes 4 Ideal for Medium Power Switching or Amplification Applications 1 base 1 2 3 0.70+0.1 -0.1 2.9

Datasheet: DBC847CPDW1T1G , DBC848BPDW1T1G , DBC848CPDW1T1G , DBMT9015 , DC0150ADJ , DC0150BDJ , DC8050 , DC9018 , 2SC945 , CHIMX1GP , CHIMX2GP , CHIMX3GP , CHP69GP , CHRT5993PT , CHRT5993TGP , CHRT5993WGP , CHT05GP .

History: CHIMX1GP | DBC848BPDW1T1G

Keywords - DCP55-16-13 transistor datasheet

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