DCP55-16-13 Datasheet and Replacement
Type Designator: DCP55-16-13
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT-223
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DCP55-16-13 Datasheet (PDF)
dcp55-16-13.pdf

Product specificationDCP55-16-13SOT-223Unit: mm Features3.50+0.26.50+0.2 -0.2-0.2Epitaxial Planar Die ConstructionComplementary PNP Type Available (DCP52)+0.20.90-0.23.00+0.1-0.1+0.37.00-0.3Ideally Suited for Automated Assembly Processes4Ideal for Medium Power Switching or Amplification Applications1 base1 2 30.70+0.1-0.12.9
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MP1711 | KTC2553 | 2N2616 | 2N417 | SS8550-J | DT600-550 | BSS80B
Keywords - DCP55-16-13 transistor datasheet
DCP55-16-13 cross reference
DCP55-16-13 equivalent finder
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History: MP1711 | KTC2553 | 2N2616 | 2N417 | SS8550-J | DT600-550 | BSS80B



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