DK101 Datasheet. Specs and Replacement

Type Designator: DK101  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.015 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO-3

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DK101 datasheet

 ..1. Size:31K  shaanxi

 dk101.pdf pdf_icon

DK101

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK101, DK151, NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switch... See More ⇒

 0.1. Size:181K  china

 3dk101.pdf pdf_icon

DK101

3DK101 NPN A B C PCM TC=25 200 mW ICM 40 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 30 30 20 V V(BR)CEO ICE=0.1mA 20 25 15 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A VB... See More ⇒

Detailed specifications: CHTA42ZGP, CHTA44ZGP, CHTA64ZGP, CHTA92LGP, CHTA92XGP, CHTA92ZGP, DK10, DK100, D965, DK11, DK150, DK151, DK200, DK201, DK30, DK300, DK301

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