DK200 Specs and Replacement
Type Designator: DK200
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO-3
DK200 Substitution
- BJT ⓘ Cross-Reference Search
DK200 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK200 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. Good voltage resistance. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switc... See More ⇒
Detailed specifications: CHTA92XGP, CHTA92ZGP, DK10, DK100, DK101, DK11, DK150, DK151, 2SC2240, DK201, DK30, DK300, DK301, DK31, DK313, DK319, DK50
Keywords - DK200 pdf specs
DK200 cross reference
DK200 equivalent finder
DK200 pdf lookup
DK200 substitution
DK200 replacement
