DK313 Specs and Replacement
Type Designator: DK313
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 80 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO-3
DK313 Substitution
- BJT ⓘ Cross-Reference Search
DK313 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK313 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards GJB33A -97. 4. Use for high power switch circuit,switching voltage-stabilized sourcefy... See More ⇒
Detailed specifications: DK150, DK151, DK200, DK201, DK30, DK300, DK301, DK31, BC547B, DK319, DK50, DK51, DMA20101, DMA20201, DMA20401, DMA20402, DMA20403
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