DK313 Datasheet, Equivalent, Cross Reference Search
Type Designator: DK313
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 80 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO-3
DK313 Transistor Equivalent Substitute - Cross-Reference Search
DK313 Datasheet (PDF)
dk313.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK313NPN Silicon High Power Switching Transistor Features: 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards: GJB33A -97. 4. Use for high power switch circuit,switching voltage-stabilized sourcefy
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: D66DV6