DSC2C01 Datasheet. Specs and Replacement
Type Designator: DSC2C01 📄📄
SMD Transistor Code: C9
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 400
Package: MINI3-G3-B
DSC2C01 Substitution
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DSC2C01 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DSC2C01 Silicon NPN epitaxial planar type For low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pi... See More ⇒
Detailed specifications: DSAF001, DSAFG01, DSAQ001, DSC2001, DSC2002, DSC2005, DSC2501, DSC2A01, MJE340, DSC2F01, DSC2G02, DSC2G03, DSC2P01, DSC3001, DSC3F01, DSC3G03, DSC4001
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