All Transistors. DSC3G03 Datasheet

 

DSC3G03 Datasheet and Replacement


   Type Designator: DSC3G03
   SMD Transistor Code: C6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 800 MHz
   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SSSMINI3-F2-B
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DSC3G03 Datasheet (PDF)

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DSC3G03

This product complies with the RoHS Directive (EU 2002/95/EC).DSC3G03Silicon NPN epitaxial planar typeFor high-frequency amplificationDSC5G03 in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code High transition frequency fT SSSMini3-F2-B Contributes to miniaturization of sets, reduction of component c

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: RT2P01M | DTC144EUAFRA | CTP1732 | DTA114TMFHA | 2SC3489 | CP502 | 2N451

Keywords - DSC3G03 transistor datasheet

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