DSC9F01 Datasheet, Equivalent, Cross Reference Search
Type Designator: DSC9F01
SMD Transistor Code: C7
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1900 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: SSMINI3-F3-B
DSC9F01 Transistor Equivalent Substitute - Cross-Reference Search
DSC9F01 Datasheet (PDF)
dsc9f01.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSC9F01Silicon NPN epitaxial planar typeFor high-frequency amplificationDSC5F01 in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code High transition frequency fT SSMini3-F3-B Contributes to miniaturization of sets, reduction of component
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .