DSC9F01 Datasheet. Specs and Replacement
Type Designator: DSC9F01
SMD Transistor Code: C7
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1900 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: SSMINI3-F3-B
DSC9F01 Substitution
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DSC9F01 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DSC9F01 Silicon NPN epitaxial planar type For high-frequency amplification DSC5F01 in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code High transition frequency fT SSMini3-F3-B Contributes to miniaturization of sets, reduction of component ... See More ⇒
Detailed specifications: DSC8003, DSC8004, DSC8102, DSC8505, DSC8P01, DSC8Q01, DSC9001, DSC9A01, TIP2955, DSC9G02, DSCF001, DSCQ001, DSS4160DS, DSS4160T, DSS5160T, DT430, L2SA1235FLT1G
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