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DSC9F01 Datasheet, Equivalent, Cross Reference Search

Type Designator: DSC9F01

SMD Transistor Code: C7

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.125 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1900 MHz

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: SSMini3-F3-B

DSC9F01 Transistor Equivalent Substitute - Cross-Reference Search

 

DSC9F01 Datasheet (PDF)

1.1. dsc9f01.pdf Size:477K _upd

DSC9F01
DSC9F01

This product complies with the RoHS Directive (EU 2002/95/EC). DSC9F01 Silicon NPN epitaxial planar type For high-frequency amplification DSC5F01 in SSMini3 type package  Features  Package  High forward current transfer ratio hFE with excellent linearity  Code  High transition frequency fT SSMini3-F3-B  Contributes to miniaturization of sets, reduction of component

Datasheet: DSC8003 , DSC8004 , DSC8102 , DSC8505 , DSC8P01 , DSC8Q01 , DSC9001 , DSC9A01 , 9015 , DSC9G02 , DSCF001 , DSCQ001 , DSS4160DS , DSS4160T , DSS5160T , DT430 , L2SA1235FLT1G .

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